Effect of Radical Scavenger and UV Irradiation on Removal of Photoresist and BARC using Water/Ozone in Cu/Low-k Interconnect
| Autor: | Quoc Toan Le, Guy Vereecke, Els Kesters, Marcel Lux, Lutz Prager |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | ECS Transactions. 25:71-77 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3202637 |
| Popis: | This study focused on the removal of post-etch photoresist (PR) and bottom anti-reflection coating (BARC) layers using O3 dissolved in H2O at 60 {degree sign}C. A complete removal of the PR layer was achieved with a short rinse in propylene carbonate (PC). However, the k-value of the film as determined using Hg-probe showed an increase of about 0.3 due to the wet process at 60 {degree sign}C for 5 min, and the BARC layer remained on the substrate. Using acetic acid (HAc) 0.5 M, a radical scavenger, as additive resulted in a small reduction in k-value of about 0.2 with respect to the sample processed in the same solution without HAc. Within the range of HAc concentration of 0.01-0.5 M, there was no clear trend and no significant effect in terms of PR removal as a function of HAc concentration, indicating a direct O3 attack of PR. The issue of BARC removal was addressed using UV treatment at 222 nm wavelength. |
| Databáze: | OpenAIRE |
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