The origin of the inhomogeneity of electrical resistivity in magnetron-sputtered indium tin oxide thin films
| Autor: | Naoyuki Inoue, Michiko Okubo, Katsutaro Ichihara, Nobuaki Yasuda |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Electron mobility
Materials science Metals and Alloys Analytical chemistry Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Volumetric flow rate Electrical resistivity and conductivity Sputtering Cavity magnetron Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 245:152-156 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(94)90891-5 |
| Popis: | The intensity distribution of the ion flux on a substrate surface has been measured to examine the origin of the inhomogeneity of resistivity in magnetron-sputtered indium tin oxide (ITO) thin films. Ion flux intensity was determined as the product of ion saturation current Ii and floating potential Vf which were measured by a cylindrical Langmuir probe placed near a glass substrate. IiVf varied depending on the substrate position and showed a maximum near the upper position of the target erosion line. The resistivity of the ITO films showed a minimum at a certain oxygen flow rate. The oxygen flow rate where resistivity showed a minimum decreased as IiVf increased. Carrier mobility increased as IiVf increased under low oxygen flow rate conditions. Carrier concentration decreased as IiVf increased under high oxygen flow rate conditions. The film microstructure and composition were related to the electrical properties. |
| Databáze: | OpenAIRE |
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