Comparison of Ultrafast Photodetectors Based on N+GaAs and LT GaAs

Autor:	Krzysztof Świtkowski, R. Mogilinski, M. Białous, B. Pura, Michał Wierzbicki
Rok vydání:	2011
Předmět:	Diffraction Materials science business.industry General Physics and Astronomy Photodetector Laser Signal Nanoclusters law.invention Wavelength Full width at half maximum law Optoelectronics business Ultrashort pulse
Zdroj:	Acta Physica Polonica A. 119:382-386
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.119.382
Popis:	We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::786bd63eb3e67435d4f92bdb11a24b69 https://doi.org/10.12693/aphyspola.119.382 Zobrazit plný text záznamu Plný text ve formátu PDF