Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)
| Autor: | Yu-Chi Kang, Der-Feng Guo, Tzu-Yen Weng, Jung-Hui Tsai |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Input offset voltage Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Bipolar junction transistor Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Condensed Matter::Materials Science Physics::Accelerator Physics Rectangular potential barrier Optoelectronics business Mathematical Physics Common emitter Voltage |
| Zdroj: | Physica Scripta. :293-296 |
| ISSN: | 1402-4896 0031-8949 |
| DOI: | 10.1088/0031-8949/2007/t129/065 |
| Popis: | The characteristics of an InP/InGaAs pnp heterostructure-emitter bipolar transistor is investigated using theoretical analysis and experimental methods. Although the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped, as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at the emitter–base junction, lowers the emitter–collector offset voltage, and increases the potential barrier for electrons simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV could be achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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