Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects
| Autor: | Boram Han, Sung-Kye Park, Woo Young Choi, Kyoung-Rok Han, Sung Jae Chung, Jun Geun Kang, Gyu-Seog Cho |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Dependency (UML) AND-OR-Invert Computer science Nand flash memory Hardware_PERFORMANCEANDRELIABILITY Parallel computing computer.file_format Threshold voltage CMOS Hardware_GENERAL Charge trap flash Hardware_INTEGRATEDCIRCUITS RDF computer Hardware_LOGICDESIGN Random dopant fluctuation |
| Zdroj: | 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings. |
| DOI: | 10.1109/nvmts.2013.6632858 |
| Popis: | Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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