Porous silicon technology for RF integrated circuit applications

Autor:	Keiki-Pua S. Dancil, Michael J. Sailor, R.J. Welty, P.M. Asbeck, S.H. Park
Rok vydání:	2002
Předmět:	Materials science Silicon Hybrid silicon laser business.industry Electrical engineering chemistry.chemical_element Silicon on insulator Porous silicon Monocrystalline silicon Silicon on sapphire chemistry Optoelectronics Silicon bandgap temperature sensor LOCOS business
Zdroj:	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271).
DOI:	10.1109/smic.1998.750212
Popis:	Coplanar transmission lines were fabricated on porous silicon layers of varying thickness, in the range of 1-15 /spl mu/m, on silicon substrates. For suitably thick porous silicon regions, the capacitive coupling to the conducting silicon substrate and the associated attenuation are suppressed. The use of porous silicon layers thus provides an approach to incorporate high performance transmission lines in a silicon-based monolithic integrated circuit process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::784ee9848786ebaa494562ef083f4870 https://doi.org/10.1109/smic.1998.750212 Zobrazit plný text záznamu