Current problems in the theory of disordered semiconductors

Autor:	V. L. Bonch-Bruevich
Rok vydání:	1987
Předmět:	Physics Electron mobility Solid-state physics business.industry Electronic structure Schrödinger equation Inorganic Chemistry symbols.namesake Semiconductor Atomic theory Quantum mechanics Materials Chemistry Density of states symbols Physical and Theoretical Chemistry business Wave function
Zdroj:	Journal of Structural Chemistry. 27:988-997
ISSN:	1573-8779 0022-4766
DOI:	10.1007/bf00755215
Popis:	This paper is an expanded version of a report read by the author at the 2nd All-Union Conference on Quantum chemistry of Solids (Riga, 1985) and at the 9th Session of Physics and Electronics (German Democratic Republic, Berlin, 1985). Three questions, which are under intensive discussion in the current literature, are examined: intermediate order in disordered semiconductors, the structure of the energy spectrum and wave functions near the mobility threshold, and the determination of the density of states in the mobility gap based on experimental data on the absorption of light.
Databáze:	OpenAIRE
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