STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE
Autor: | E. Hartmann, T. Gabriel, A. Liebheit, M. Ortsiefer, M. Schwartzkopff, P. Radojkovic |
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Rok vydání: | 1998 |
Předmět: | |
Zdroj: | Applied Physics A: Materials Science & Processing. 66:S371-S375 |
ISSN: | 1432-0630 0947-8396 |
Popis: | cm-3, the background n-typecharacter can be overcompensated, giving rise to a pronounced radiative transition into the acceptor level located at ≈3.2 eV. The absolute peak intensities, however, markedly depend on the site of excitation at the sample surface. This effect allows to distinguish unequivocally between high-quality and defect-rich film regions, also offering the opportunity to correlate near-surface optical properties with morphological features. By adding 10% Al, the resulting crystal alloy exhibits a wider energy-band gap which is reflected in a blue shift of the respective STM-excited luminescence signal. |
Databáze: | OpenAIRE |
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