STM-excited and spectrally resolved luminescence of epitaxial GaN and AlGaN layers grown by MBE

Autor:	E. Hartmann, T. Gabriel, A. Liebheit, M. Ortsiefer, M. Schwartzkopff, P. Radojkovic
Rok vydání:	1998
Předmět:	Materials science business.industry Alloy General Chemistry engineering.material Epitaxy Acceptor Blueshift Crystal Excited state engineering Optoelectronics General Materials Science Luminescence business Excitation
Zdroj:	Applied Physics A: Materials Science & Processing. 66:S371-S375
ISSN:	1432-0630 0947-8396
Popis:	cm-3, the background n-typecharacter can be overcompensated, giving rise to a pronounced radiative transition into the acceptor level located at ≈3.2 eV. The absolute peak intensities, however, markedly depend on the site of excitation at the sample surface. This effect allows to distinguish unequivocally between high-quality and defect-rich film regions, also offering the opportunity to correlate near-surface optical properties with morphological features. By adding 10% Al, the resulting crystal alloy exhibits a wider energy-band gap which is reflected in a blue shift of the respective STM-excited luminescence signal.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7846d7e20a79ce9b26cdd8a4c461decf https://doi.org/10.1007/s003390051166 Zobrazit plný text záznamu Plný text ve formátu PDF