| Autor: |
Im-Gyu Yeo, Byung-Chul Shin, Jung-Doo Seo, Won-Jae Lee, Tae Woo Lee, Jung-Woo Choi, Young-Hee Kim, Ku Kap-Ryeol |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:390-396 |
| ISSN: |
1226-7945 |
| DOI: |
10.4313/jkem.2009.22.5.390 |
| Popis: |
The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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