Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions
| Autor: | M. D. Looper, Philip J. Kuekes, E.E. King, R. Stanley Williams, Steven C. Witczak, Jianhua Yang, Jon V. Osborn, Erica DeIonno, William M. Tong, Duncan Stewart |
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| Rok vydání: | 2010 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry chemistry.chemical_element Memristor Dielectric Radiation law.invention Non-volatile memory Hysteresis Nuclear Energy and Engineering chemistry law Electrode Electronic engineering Optoelectronics Electrical and Electronic Engineering business Radiation hardening |
| Zdroj: | IEEE Transactions on Nuclear Science. 57:1640-1643 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2010.2045768 |
| Popis: | Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of ~1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace. |
| Databáze: | OpenAIRE |
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