Surface characterization of ion-implanted Si-SiO2structures

Autor:	K.L. Wang, P.V. Gray
Rok vydání:	1976
Předmět:	Materials science Dopant Silicon Annealing (metallurgy) business.industry Doping Analytical chemistry chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Ion Ion implantation chemistry MOSFET Optoelectronics business Leakage (electronics)
Zdroj:	1976 International Electron Devices Meeting.
DOI:	10.1109/iedm.1976.189052
Popis:	This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::782bfdd90d6e063bde725b52492fc556 https://doi.org/10.1109/iedm.1976.189052 Zobrazit plný text záznamu