Characterization of small area laser beam annealing
| Autor: | H. G. Parks, K. Rose |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Penetration (firestop) Condensed Matter Physics Microstructure Laser Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry chemistry Aluminium law Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | Journal of Electronic Materials. 10:823-844 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02661002 |
| Popis: | The structure of small area (∼10 micron diameter) spots produced by Q-switched pulsed laser irradiation of n-type silicon covered by a thin film of sputtered aluminum have been studied. Spatially resolved SIMS analysis has been combined with SEM observations to characterize the resulting microstructure. Careful analysis of the SIMS results indicate the spots display subsurface alloying and deep (∼1 μm) aluminum penetration. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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