Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy
| Autor: | Wolfgang Skorupa, Paul G. Coleman, R.A. Yankov, W. Anwand, G. Brauer |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Ion Positron Ion implantation Vacancy defect Annihilation radiation Spectroscopy Doppler broadening Nuclear chemistry |
| Zdroj: | Applied Surface Science. 149:140-143 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(99)00189-0 |
| Popis: | 6H–SiC n-type wafers were implanted with Al + and N + ions in two ways: first Al + followed by N + and vice versa. The implantation was carried out at four different substrate temperatures between 200 and 800°C. Depth profiles of the defects were evaluated from measured Doppler broadening profiles of the annihilation radiation as a function of incident positron energy for both co-implantation sequences. Differences in the defect distribution and in the defect size are shown and discussed. |
| Databáze: | OpenAIRE |
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