Ferroelectric gate transistors
| Autor: | He Lin, Timohy A. Rost, Thomas A. Rabson |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Transistor Lithium niobate Gate dielectric Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Control and Systems Engineering law Gate oxide Hardware_INTEGRATEDCIRCUITS Materials Chemistry Ceramics and Composites Optoelectronics Field-effect transistor Electrical and Electronic Engineering Polarization (electrochemistry) Metal gate business Hardware_LOGICDESIGN |
| Zdroj: | Integrated Ferroelectrics. 6:15-22 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584589508019350 |
| Popis: | The characteristics of a field effect transistor with a lithium niobate gate insulator are reported. Shifts in the gate characteristics consistent with polarization switching have been observed. Comparisons with the results of some of the recently published theoretical models for ferroelectric gate transistors are made. Advantages and disadvantages of buffer layers in the gate structure are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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