The formation and recrystallization of amorphous zones produced in GaAS by ion irradiation
| Autor: | M. A. Kirk, I. M. Robertson, M. W. Bench |
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| Rok vydání: | 1988 |
| Předmět: | |
| Zdroj: | Proceedings, annual meeting, Electron Microscopy Society of America. 46:460-461 |
| ISSN: | 2690-1315 0424-8201 |
| DOI: | 10.1017/s0424820100104364 |
| Popis: | Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments were undertaken to provide additional insight into the mechanisms by which individual amorphous zones and eventually amorphous layers are created. To understand these mechanisms, the structure of the defects created as a function of material, irradiating ion, dose, dose rate, and implantation tenperature have been studied using TEM. Also, the recovery of the crystalline structure by annealing has been investigated.These experiments were performed at the High-Voltage Electron Microscope - Ion Accelerator Facility at Argonne National Laboratory. This facility consists of an HVEM which has been interfaced with two ion accelerators. This coupling, plus the availability of several specimen stages permits ion irradiations to be performed in the specimen chamber of the microscope at controlled temperatures from 10 to 1000 K. |
| Databáze: | OpenAIRE |
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