Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling

Autor:	C. Porret, J.-L. Everaert, M. Schaekers, L.-A. Ragnarsson, A. Hikavyy, E. Rosseel, G. Rengo, R. Loo, R. Khazaka, M. Givens, X. Piao, S. Mertens, N. Heylen, H. Mertens, C. Toledo De Carvalho Cavalcante, G. Sterckx, S. Brus, A. Nalin Mehta, M. Korytov, D. Batuk, P. Favia, R. Langer, G. Pourtois, J. Swerts, E. Dentoni Litta, N. Horiguchi
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019501
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78086ce8edcc5c3d4eede696a5240455 https://doi.org/10.1109/iedm45625.2022.10019501 Zobrazit plný text záznamu