Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer
| Autor: | M.R. Gokhale, C.-P. Chao, D. Garbuzov, Stephen R. Forrest, J.C. Dries, P. Studenkov, Lei Xu |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Physics::Optics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound Wavelength Optics chemistry law Optical cavity Optoelectronics Electrical and Electronic Engineering business Absorption (electromagnetic radiation) Waveguide Current density Layer (electronics) |
| Zdroj: | IEEE Photonics Technology Letters. 9:569-571 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | We demonstrate a monolithically integrated 1.55-/spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser with a passive Y-branch waveguide in a vertical twin-waveguide structure. To reduce the sensitivity of the device performance characteristics to laser cavity length and variations in the layer structure, we introduce an In/sub 0.53/Ga/sub 0.47/As absorption, or "loss" layer. This layer eliminates the propagation of the even mode, while having minimal effect on the odd mode. The threshold current densities and differential efficiencies of the devices are unaffected by the loss layer. A record high coupling efficiency of 45% from the laser to the external passive waveguide is obtained. |
| Databáze: | OpenAIRE |
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