| Autor: |
Wang Ai-Fen, Li Wen-Bin, Sun Xiao-Yu, Zheng Xiao-Yan, You Yin-Tao |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Acta Physica Sinica. 59:6527 |
| ISSN: |
1000-3290 |
| DOI: |
10.7498/aps.59.6527 |
| Popis: |
Exciton dissociation process and its mechanism at the NPB-Alq3 interface are studied by means of transient photovoltage techniques. For bilayer structured samples made from NPB and Alq3, the transient photovoltage upon 355 nm pulsed laser irradiation was measured. By analysis of the transient photovoltage of samples with different structures or with interface exciton blocking layer that climinates the effect of exciton dissociation at the external interface, it is concluded that the mechanism of exciton dissociation at the NPB-Alq3interface results in holes injected into NPB and electrons injected into Alq3. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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