High Voltage RF LDMOS Technology for Broadcast Applications

Autor:	Stephan Jo Cecile Henri Theeuwen, Jos Klappe, W.J.A. Sneijers, J.A.M. de Boet
Rok vydání:	2008
Předmět:	LDMOS Engineering business.industry Transistor Electrical engineering High voltage Octave (electronics) Power (physics) law.invention law Logic gate MOSFET Electronic engineering Radio frequency business
Zdroj:	2008 European Microwave Integrated Circuit Conference.
DOI:	10.1109/emicc.2008.4772219
Popis:	We present high voltage (40-50V) RF LDMOS technologies to realize 300-500 W power levels for frequencies up to 1.0 GHz. This technology has an extremely good ruggedness, one octave wide band operation, and reliable circuit matching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::78036f587eb727af9866a03819873f0e https://doi.org/10.1109/emicc.2008.4772219 Zobrazit plný text záznamu