Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

Autor:	D. S. Abramkin, T. S. Shamirzaev
Rok vydání:	2019
Předmět:	010302 applied physics Angular momentum Materials science Condensed matter physics Exciton Heterojunction 02 engineering and technology Type (model theory) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure Space (mathematics) 01 natural sciences Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science 0103 physical sciences 0210 nano-technology Spin (physics)
Zdroj:	Semiconductors. 53:703-710
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782619050026
Popis:	Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::77fa764919802b33734a4917307fbc0f https://doi.org/10.1134/s1063782619050026 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.