Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

Autor:	Bruno K. Meyer, Walter von Förster, A. Hofstaetter, Hiroshi Amano, F. Leiter, Isamu Akasaki, Nikolai G Romanov, Detlev M. Hofmann, H. Alves, Wolfgang Burkhardt
Rok vydání:	1999
Předmět:	Materials science Magnetic circular dichroism Infrared Band gap Exciton Doping Analytical chemistry Condensed Matter Physics Epitaxy Acceptor Electronic Optical and Magnetic Materials Nuclear magnetic resonance Electrical and Electronic Engineering Spectroscopy
Zdroj:	Physica B: Condensed Matter. :43-45
ISSN:	0921-4526
DOI:	10.1016/s0921-4526(99)00402-0
Popis:	Mg acceptors in GaN epitaxial layers grown by metal–organic vapour-phase epitaxy were investigated by optically detected magnetic resonance (ODMR) spectroscopy. The magnetic resonances were detected on the magnetic circular dichroism (MCD) of the acceptor bound exciton (Mg0X) in the near bandgap region, and in the infrared spectral range on the MCD of the hole ionisation transition Mg0+hν→Mg−+hVB. The observed g-values of the Mg0 acceptors range for g|| from 2.102 to 2.065 and for g⊥ from 1.94 to 2.00, respectively. These variations depend on the Mg doping concentration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::77f44517935ccfce45072848d09ebe36 https://doi.org/10.1016/s0921-4526(99)00402-0 Zobrazit plný text záznamu Full Text from ScienceDirect