Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

Autor:	Anders Jauhiainen, Stefan Bengtsson, David Westberg
Rok vydání:	1998
Předmět:	Permittivity Materials science Ideal (set theory) Condensed matter physics business.industry General Physics and Astronomy Capacitance Condensed Matter::Materials Science Semiconductor Rough surface Surface roughness Condensed Matter::Strongly Correlated Electrons Metal insulator business
Zdroj:	Journal of Applied Physics. 84:3960-3965
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.368574
Popis:	The capacitance of metal–insulator–semiconductor structures with inhomogeneities in the insulating film is significantly influenced by phenomena not present in the capacitance of corresponding ideal structures. These inhomogeneities may be structural ones like a rough surface topography or compositional ones like inclusions of a different material in the film. In the case of a rough surface, three-dimensional simulations of the accumulation capacitance are compared to measurements on aluminum-polycrystalline diamond-silicon devices. The results show that the surface roughness has to be considered when interpreting the measured data. Also, neglecting the effect of the surface roughness results in erroneous values of the permittivity of the insulating film.
Databáze:	OpenAIRE
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