A poly-Si thermoelectric cooling device fabricated by surface micromachining technology

Autor:	S.R.S. Huang, H.J.H. Chen, I Yu Huang, Jr Ching Lin
Rok vydání:	2004
Předmět:	Fabrication Thermoelectric cooling Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Thermal conduction Surface micromachining chemistry Thermoelectric effect Electronics cooling Microelectronics Optoelectronics business
Zdroj:	TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).
DOI:	10.1109/sensor.2003.1216957
Popis:	In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about /spl sim/40/spl times/40 (/spl mu/m/sup 2/) and there are about /spl sim/62,500 elements in 1 (cm/sup 2/) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15/spl deg/C reduction from the surrounding environment under 80 mA current drive.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::77e25572a22dc9cda86f3d0b51873eb2 https://doi.org/10.1109/sensor.2003.1216957 Zobrazit plný text záznamu