To the understanding of the formation of the III–V based droplet epitxial nanorings
| Autor: | Andrea Stemmann, Ákos Nemcsics, Jenő Takács |
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| Rok vydání: | 2012 |
| Předmět: |
Chemistry
Kinetics Substrate (electronics) Condensed Matter Physics Epitaxy Aspect ratio (image) Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystal Crystallography Chemical physics Nano Electrical and Electronic Engineering Safety Risk Reliability and Quality Material properties Quantum |
| Zdroj: | Microelectronics Reliability. 52:430-433 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2011.09.022 |
| Popis: | The paper deals with the kinetics of the droplet epitaxial GaAs quantum ring formation grown on AlGaAs (0 0 1) surface. The observation is, that the aspect ratio of these nano structures is depends not only on the technological parameters but on the size of the initial droplet. Under appropriate growth conditions, the depressions, in the middle of the rings are deeper than the surface level of the substrate. A large number of tests show, that the depressions in the middle of the small rings are often deeper than that of the larger ones. The number is larger, than just statistical fluctuation. An explanation for this phenomenon and its kinetics are given in the paper, based on the size dependence of the material properties, like for instance solubility. The plausible explanation assumes is that the probability of the crystal seed formation in the larger droplets is higher. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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