In-Situ Monitoring of the Initial Growth of a-C:H Films by AES

Autor:	K.G. Tschersich
Rok vydání:	1989
Předmět:	In situ Auger electron spectroscopy Materials science Ion beam deposition Carbon film Sputtering Analytical chemistry Sharp interface Layer (electronics) Amorphous solid
Zdroj:	MRS Proceedings. 153
ISSN:	1946-4274 0272-9172
Popis:	Amorphous hydrogenated carbon films are deposited by direct ion beam deposition onto Si and W substrates at room temperature. Simultaneously, the sample surface composition is measured by Auger electron spectroscopy. The results indicate a sharp interface between film and Si and the formation of a W2C layer between film and W. The in-situ measurements are compared with sputter depth profiles. It is found that the former ones give insight into film growth processes, that is unattainable by sputter profiling.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::77d209ee75212e5ac89641773f578dac https://doi.org/10.1557/proc-153-115 Zobrazit plný text záznamu Full text from SpringerLink