Trapped space charges in electron-bombarded insulators
| Autor: | D J Gibbons |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Doping Electron Dielectric Condensed Matter Physics Space charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Electrical resistivity and conductivity Electric field Charge carrier Atomic physics Excitation |
| Zdroj: | Journal of Physics D: Applied Physics. 7:433-442 |
| ISSN: | 0022-3727 |
| DOI: | 10.1088/0022-3727/7/3/310 |
| Popis: | Experimental studies have been undertaken on electron-bombarded thin insulating films of ZnS, As2S3 and doped CdS. Under an applied electric bias field, one of the results of bombardment in the case of the first two is the build-up of an internal static space charge due to trapped carriers. The speed with which this charge is established and released by electron beam excitation has been studied. In the case of CdS, it is found that the dominant result of bombardment is not carrier trapping, but the results described here lend further support to the suggestion that EBC in doped CdS is influenced very strongly by the release of carriers already trapped. The simplified model used for volume charge storage leads to other results substantially in agreement with EBC phenomena in ZnS and As2S3 described here and elsewhere. |
| Databáze: | OpenAIRE |
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