Hydrogen passivation of shallow donors in silicon
| Autor: | E. C. F. da Silva, Lucy V. C. Assali, J. R. Leite |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Silicon
Chemistry chemistry.chemical_element Hydrogen passivation Hydrogen atom Condensed Matter Physics Atomic and Molecular Physics and Optics symbols.namesake Impurity Physics::Atomic and Molecular Clusters symbols Physics::Chemical Physics Physical and Theoretical Chemistry Atomic physics Hamiltonian (quantum mechanics) |
| Zdroj: | International Journal of Quantum Chemistry. 36:693-699 |
| ISSN: | 1097-461X 0020-7608 |
| Popis: | The Green's function technique within the framework of a valence-force-field Hamiltonian has been used to study the vibrational properties of the donor–hydrogen complexes, for the donors P, As, and Sb in silicon. The A1 and E vibrational energies of the complex were investigated by adopting two atomic configurations corresponding to different positions for the hydrogen atom relative to the donor impurity. According to the currently accepted configuration H is bonded to a silicon atom. Another possibility is to assume that H is directly bonded to the donor impurity. We have shown that both models reproduce all the vibrational energies which have been measured for these pair complexes until now. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text