A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements
| Autor: | Mihaela Popovici, Andrea Padovani, Attilio Belmonte, Ben Kaczer, Luca Larcher, Young Gon Lee, Ilya Shlyakhov, Laura Nyns, Valeri Afanas'ev, Dimitri Linten, Milan Pešić, Hokyung Park |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Physics Random access memory Condensed matter physics Band gap Conductance 01 natural sciences Electronic Optical and Magnetic Materials law.invention Capacitor law 0103 physical sciences Sensitivity (control systems) Electrical and Electronic Engineering Spectroscopy Energy (signal processing) Stack (mathematics) |
| Zdroj: | IEEE Transactions on Electron Devices. 66:1892-1898 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current ( ${J}$ – ${V}$ ), capacitance ( ${C}$ – ${V}$ ), and conductance ( ${G}$ – ${V}$ ) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce ${J}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal–insulator–metal structures of different compositions for dynamic random-access memory capacitor applications. The origin of the observed voltage, temperature, and frequency dependencies of the ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ data is understood, and the atomic structure of the relevant stack defects is identified. |
| Databáze: | OpenAIRE |
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