In situ X-ray studies of vapor phase epitaxy of PbTiO3
| Autor: | Dillon D. Fong, Orlando Auciello, Stephen K. Streiffer, Jeffrey A. Eastman, G. B. Stephenson, Paul H. Fuoss, M. V. Ramana Murty, M. E. M. Aanerud, Carol Thompson, Anneli Munkholm |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Scattering Crystal growth Condensed Matter Physics Epitaxy Ferroelectricity Electronic Optical and Magnetic Materials Reciprocal lattice Optics Phase (matter) Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film business |
| Zdroj: | Physica B: Condensed Matter. 336:81-89 |
| ISSN: | 0921-4526 |
| Popis: | As part of a program to understand and control the structure of ferroelectric thin films grown by metal organic vapor phase epitaxy (MOVPE), we have used X-ray scattering to observe the surface structure of PbTiO 3 films during and following growth. Moderately high energy (24 keV) X-rays are used to penetrate the chamber walls for in situ measurements in the high-temperature, reactive MOVPE environment. Performing measurements in situ allows us to study the growth process in real time, to control the thickness of the films to sub-unit-cell accuracy, to observe the surface structure in equilibrium with the vapor, and to preserve film stoichiometry during high-temperature study by maintaining an overpressure of PbO. While the higher X-ray energy also permits a large volume of reciprocal space to be mapped, it presents challenges for surface scattering due to the small critical angle. Examples of results will be presented from studies of surface structure dynamics, crystal growth, and ferroelectric stripe domains in thin films. |
| Databáze: | OpenAIRE |
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