Power MOS devices: Structure evolutions and modelling approaches
| Autor: | P. Rossel, G. Charitat, H. Tranduc |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Engineering
business.industry Transistor Numerical models Semiconductor device Condensed Matter Physics On resistance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage law Bibliography Electronic engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality business Voltage |
| Zdroj: | Microelectronics Reliability. 37:1375-1388 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(97)00009-7 |
| Popis: | In this survey paper, the historical evolution of power MOS transistor structures is presented and mostly used actual devices are described. General considerations on current and voltage capabilities are discussed and configuration of popular structures is given. It then presents a synthesis of different modelling approaches proposed in recent years. These include analytical solutions for basic electrical parameters, e.g. threshold voltage, on resistance, saturation and quasi-saturation effects, temperature impact and voltage handling capability. The numerical solutions of basic semiconductor devices are then briefly described along with some typical problems which can be solved this way. The compact circuit modelling method is finally explained with emphasis on dynamic behaviour modelling. Physical numerical models are detailed together with those intended for circuit simulation. A fairly exhaustive bibliography is given for completeness. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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