Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition
| Autor: | Zhihong Feng, Bao-Lin Zhang, Yuantao Zhang, Guotong Du, Ying Wang, Shiwei Zhuang, Yuanjie Lv, Xin Dong, Daqiang Hu, Jingzhi Yin |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Process Chemistry and Technology 02 engineering and technology Chemical vapor deposition Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Carbon film Electrical resistivity and conductivity 0103 physical sciences Materials Chemistry Ceramics and Composites Sapphire Optoelectronics Metalorganic vapour phase epitaxy Thin film 0210 nano-technology business |
| Zdroj: | Ceramics International. 44:3122-3127 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2017.11.079 |
| Popis: | Heteroepitaxial growth of conductive Si-doped β-Ga 2 O 3 films on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) was successfully performed. The effect of Si content on the structural, morphological, electrical and optical properties of Si-doped β-Ga 2 O 3 films was investigated in detail. Distinctive surface morphology evolution of films depending on Si content was observed and presented. The Si-doped β-Ga 2 O 3 films exhibited high transmittance in the ultraviolet-visible regions. The temperature-dependent PL was carried out especially to discuss the photoluminescence properties of Si-doped β-Ga 2 O 3 films. More importantly, the results suggested that the conductivity of heteroepitaxial Si-doped β-Ga 2 O 3 films by MOCVD could be realized and controlled by adjusting the Si content. The minimum resistivity of 1.79×10 −1 Ω·cm was obtained for the films grown under the SiH 4 flow rate of 0.08 sccm. |
| Databáze: | OpenAIRE |
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