| Popis: |
Fe 2 O 3 samples have been prepared using both substitutional and defect doping techniques. Defect doped samples were sintered in air at 1350° C for 20 hours, reduced in a H 2 atmosphere for various times at 300° C, and finally reoxidized at 700–900° C for short periods. Resulting resistivities ranged from .01 to 5000 ohm-cm. Such electrodes were found to have good photoelectrochemical properties, and to be quite sensitive to chemical etching. Substitutional doping of Fe 2 O 3 with Si, Ca, Nb, Cu, Ru, Mg, and Zr was performed, with Si and Cu providing the best results. The effects of quenching time and temperature on the properties of these electrodes are discussed. |
