Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride
| Autor: | W. V. Lundin, E. Y. Lundina, Sergey Yu. Karpov, Dmitry A Zakheim, A. V. Sakharov, Andrey F. Tsatsulnikov, Pavel N. Brunkov, Eugene E Zavarin |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Deposition (chemistry) |
| Zdroj: | Semiconductor Science and Technology. 33:115008 |
| ISSN: | 1361-6641 0268-1242 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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