Potential-Induced Degradation of a Si Nitride/Crystalline Si Interface Observed Through Minority Carrier Lifetime Measurement

Autor:	Keisuke Ohdaira, Seira Yamaguchi, Naoyuki Nishikawa
Rok vydání:	2017
Předmět:	Materials science Silicon business.industry Drop (liquid) Stacking chemistry.chemical_element Carrier lifetime Nitride Potential induced degradation chemistry.chemical_compound Silicon nitride chemistry Optoelectronics Wafer business
Zdroj:	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
DOI:	10.1109/pvsc.2017.8366664
Popis:	We directly observed the potential-induced degradation (PID) of a silicon nitride (SiNx)/crystalline Si (c-Si) interface by measuring the effective minority carrier lifetime (Teff) of c-Si wafers laminated in a module-like structure. We observed slow Teff reduction during a negative-bias PID stress and a rapid drop of Teff by positive-bias application. The former may correspond to the introduction of Na to stacking faults on cSi, while the latter is probably related to negative charge accumulation in the SiNx. These behaviors well reproduce the characteristics of PID for n-type rear-emitter (RE) photovoltaic (PV) modules.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::776d389d251504a10fc59012739dcc48 https://doi.org/10.1109/pvsc.2017.8366664 Zobrazit plný text záznamu