Tunneling microscopy of 2H-MoS2: A compound semiconductor surface
| Autor: | Chunli Bai, John A. Kramar, J. D. Baldeschwieler, M. Weimer |
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| Rok vydání: | 1988 |
| Předmět: |
inorganic chemicals
Materials science Scanning tunneling spectroscopy Nanotechnology Spin polarized scanning tunneling microscopy Conductive atomic force microscopy Scanning capacitance microscopy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Electrochemical scanning tunneling microscope law.invention Scanning probe microscopy law Microscopy Scanning tunneling microscope |
| Zdroj: | Physical Review B. 37:4292-4295 |
| ISSN: | 0163-1829 |
| Popis: | Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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