Defects inducing anomalous exciton kinetics in monolayer WS2
| Autor: | Ke Wu, Hongxing Xu, Tai Min, Tianzhu Zhang, Rongguang Du, Zhenwei Ou, Yan Zeng, Ti Wang, Quanbing Guo, Tao Li, Wei Jiang, Zhe Li, Yuhao Xu |
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| Rok vydání: | 2021 |
| Předmět: |
Work (thermodynamics)
Materials science Condensed matter physics business.industry Hexagonal crystal system Exciton Kinetics Condensed Matter Physics Atomic and Molecular Physics and Optics Condensed Matter::Materials Science Semiconductor Monolayer Ultrafast laser spectroscopy Radiative transfer General Materials Science Electrical and Electronic Engineering business |
| Zdroj: | Nano Research. 15:1616-1622 |
| ISSN: | 1998-0000 1998-0124 |
| DOI: | 10.1007/s12274-021-3710-7 |
| Popis: | Two-dimensional (2D) transition metal dichalcogenide (TMD) has emerged as an effective optoelectronics material due to its novel optical properties. Understanding the role of defects in exciton kinetics is crucial for achieving high-efficiency TMD devices. Here, we observe defects induced anomalous power dependence exciton dynamics and spatial distribution in hexagonal heterogeneous WS2. With transient absorption microscopy study, we illustrate that these phenomena originate from the competition between radiative and defect-related non-radiative decays. To understand the physics behind this, a decay model is introduced with two defect-related channels, which demonstrates that more excitons decay through non-radiative channels in the dark region than the bright region. Our work reveals the mechanisms of anomalous exciton kinetics by defects and is instrumental for understanding and exploiting excitonic states in emerging 2D semiconductors. |
| Databáze: | OpenAIRE |
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