InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon
| Autor: | Arnab Hazari, Shafat Jahangir, Pallab Bhattacharya |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Astrophysics::High Energy Astrophysical Phenomena Nanowire Physics::Optics Gallium nitride 02 engineering and technology Indium gallium nitride 01 natural sciences law.invention Semiconductor laser theory Condensed Matter::Materials Science chemistry.chemical_compound law 0103 physical sciences 010302 applied physics business.industry Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology chemistry Quantum dot Optoelectronics 0210 nano-technology business Light-emitting diode Molecular beam epitaxy |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2252981 |
| Popis: | GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|