Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission

Autor:	Eugene A Avrutin, Boris S Ryvkin
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductor Science and Technology. 37:125002
ISSN:	1361-6641 0268-1242
DOI:	10.1088/1361-6641/ac985a
Popis:	A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::775e8111adab2c77fad4117a43038f88 https://doi.org/10.1088/1361-6641/ac985a Zobrazit plný text záznamu