Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide

Autor:	V. V. Krasovskii, V. D. Tkachev, V. A. Vilkotskii, R. D. Kakanakov, D. S. Domanevskii
Rok vydání:	1979
Předmět:	chemistry.chemical_compound Band gap Chemistry Spectrum (functional analysis) Doping Indium arsenide Atomic physics Condensed Matter Physics Luminescence Acceptor Spectral line Electronic Optical and Magnetic Materials Burstein–Moss effect
Zdroj:	Physica Status Solidi (b). 91:71-81
ISSN:	1521-3951 0370-1972
Popis:	The shape of near-band-edge luminescence spectrum is studied and a quantitative analysis of the Burstein-Moss shift in the three band approximation of Kane's theory is carried out. It is shown experimentally that with increasing electron concentration the spectrum maximum is shifted towards the high-energy region up to 0.7 eV. At the high-energy side of spectrum a kink is observed, and at the low-energy side, an emission maximum at 0.39 to 0.40 eV. The calculations show that the spectrum shape may be described by indirect transitions: band–band and band–shallow acceptor. The narrowing of the optical band gap is accounted for a better agreement between the experimental and theoretical spectra. [Russian Text Ignored].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7753215ec3bd6cfdb4c3a88ad9b349b2 https://doi.org/10.1002/pssb.2220910106 Zobrazit plný text záznamu Plný text