| Autor: |
Alfred Zehe, A. Ramírez, E. Reynoso |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :457-462 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.480-481.457 |
| Popis: |
A new kind of a bound state has been identified at strong external excitation levels in semiconductors with high amphoteric doping, which is formed of a close donor-acceptor molecule and a neighboring second donor and/or acceptor. The recombination behavior of such a bound state is best described by AUGER-type transitions, reason for which this state is called an AUGER molecule. We have determined the existence region of such molecules in silicon-doped Ga1-xAlxAs with respect to excess carrier density and temperature by means of electron-beam excited luminescence spectroscopy at low and medium temperatures. The donor-acceptor pair radiation intensity is affected in a characteristic manner by the existence of the AUGER molecule state at elevated excitation levels and not too low temperatures. A computerized model calculation of corresponding rate coefficients turns out to be in good agreement with experimental results. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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