Negative photoconductivity in sulfur-hyperdoped silicon film
| Autor: | Xiaohong Li, Liu Dexiong, Sifu Hu, Yanlei Hu, C. Wen, Xiaoming Lin, Guoqiang Li, Yanbin Zhang, Yong Cai, Kai Wang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Band gap Mechanical Engineering Photoconductivity chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Sulfur chemistry Mechanics of Materials 0103 physical sciences Ultraviolet light Optoelectronics General Materials Science 0210 nano-technology business Sheet resistance |
| Zdroj: | Materials Science in Semiconductor Processing. 98:106-112 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2019.04.002 |
| Popis: | We report a negative photoconductivity effect in sulfur-hyperdoped silicon film under near-ultraviolet light illumination. A weak incident ultraviolet light can cause a significant increase in the sheet resistance of the film, and the most sensitive sample observed has the maximum increment of 817%. In addition, the amplitude of this negative photoconductivity decreases with the time of thermal annealing treatment. The negative photoconductivity of sulfur-hyperdoped silicon film is related to light-induced defects which act as recombination center in the bandgap. |
| Databáze: | OpenAIRE |
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