Accurate Measurement of Sneak Current in ReRAM Crossbar Array with Data Storage Pattern Dependencies
| Autor: | Takashi Ohsawa, Yaqi Shang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Current compensation
Computer science business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Crossbar array 01 natural sciences Size increase 0104 chemical sciences Resistive random-access memory Compensation (engineering) Computer data storage Electronic engineering Current (fluid) Crossbar switch 0210 nano-technology business |
| Zdroj: | 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). |
| DOI: | 10.1109/vlsi-tsa.2019.8804668 |
| Popis: | In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE. |
| Databáze: | OpenAIRE |
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