| Autor: |
A. L. J. Pereira, R.G. Ngumbu, D.M.G. Leite, S.K. Kemei, P.M. Odhiambo, M.S.K. Kirui, F. G. Ndiritu |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
Materials Science in Semiconductor Processing. 20:23-26 |
| ISSN: |
1369-8001 |
| DOI: |
10.1016/j.mssp.2013.12.011 |
| Popis: |
The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1−xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45 °C≤T≤70 °C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs ≤20% allow damping at temperature range of 45 °C≤T≤70 °C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1−xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1−xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1−xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45 °C≤T≤70 °C. Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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