On the endurance performance of FLOTOX EEPROM cells with WSi2 overcoated floating gate electrode

Autor:	Federico Pio, Constantin Papadas, Paolo Ghezzi, G. Pananakakis, Carlo Riva, Gerard Ghibaudo
Rok vydání:	1993
Předmět:	Materials science Annealing (metallurgy) business.industry Doping General Engineering Electrical engineering Oxide Chemical vapor deposition law.invention chemistry.chemical_compound chemistry law Silicide Electrode Optoelectronics business Deposition process EEPROM
Zdroj:	Microelectronics Journal. 24:395-399
ISSN:	0026-2692
DOI:	10.1016/0026-2692(93)90044-f
Popis:	Comparison between endurance performance obtained on FLOTOX EEPROM cells with heavily doped poly-Si as floating gate electrode and heavily doped poly-Si overcoated with WSi 2 is presented. The poor endurance performance which has been obtained on the memory cells with silicidated floating gate electrodes has been quantitatively attributed to fluorine contamination of the tunnel oxide layer, introduced during the LPCVD silicide deposition process step. Finally, the necessity for optimizing the post-silicidation annealing procedure is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::77291e3540ab20cc130d4834d43b4f80 https://doi.org/10.1016/0026-2692(93)90044-f Zobrazit plný text záznamu