Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions
| Autor: | M. A. Trishenkov, Nikolai A. Sobolev, P. E. Khakuashev, A. M. Emel’yanov |
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| Rok vydání: | 2000 |
| Předmět: |
Free electron model
Materials science business.industry Physics::Optics chemistry.chemical_element Electroluminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Auger Erbium chemistry Excited state Rise time Optoelectronics business Excitation Diode |
| Zdroj: | Semiconductors. 34:927-930 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Si:(Er,O)-based tunnel light-emitting diodes were fabricated and exhibited the shortest ever recorded characteristic rise time for erbium electroluminescence. This is due to the formation of Er-related centers with an effective excitation cross section for erbium ions of ∼7×10−16 cm2 and an excited-state lifetime of ∼17 µs. The lifetime of the first excited state of erbium ions after turning off the reverse current was measured for the first time; this lifetime is associated with Auger energy transfer to free electrons in the electrically neutral region of the diode. |
| Databáze: | OpenAIRE |
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