Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
| Autor: | Chang Liu, Leng Seow Tan, Eng Fong Chor |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Passivation business.industry Transconductance Gate dielectric Gallium nitride Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Electrical and Electronic Engineering business AND gate Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | Semiconductor Science and Technology. 22:522-527 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/22/5/011 |
| Popis: | AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 as a surface passivation layer and metal–oxide–semiconductor HEMTs (MOS-HEMTs) using HfO2 as gate oxide have been investigated and compared with the regular HEMTs. In MOS-HEMTs, the HfO2 gate dielectric is also used for passivation simultaneously. Our measurements have shown that both passivated HEMTs and MOS-HEMTs outperformed the regular HEMTs in dc, high-frequency and pulsed-mode operations, with MOS-HEMTs exhibiting the best characteristics, including the highest drain current, the lowest gate leakage current, the largest gate voltage swing, the highest cut-off frequencies and the best immunity to current collapse. In addition, the decrease in transconductance of MOS-HEMTs relative to HEMTs is as low as 8.7%, most probably a consequence of the high-k value of HfO2. Our results thus indicate the great potential of HfO2/AlGaN/GaN MOS-HEMTs for high-frequency and high-power applications. |
| Databáze: | OpenAIRE |
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