Wide-range and low supply dependency MOSFET-basXDed temperature sensor utilizing statistical properties of scaled MOSFETs
| Autor: | Shinichi Ota, Mahfuzul Islam, Takashi Hisakado, Osami Wada |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 62:SC1098 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.35848/1347-4065/acb94e |
| Popis: | We present a MOSFET-based temperature sensing method capable of high-accuracy temperature estimation across a wide temperature range while having a low supply voltage dependency. Existing MOSFET-based sensors, while capable of low-power operation, suffer from low sensing accuracy and a narrow sensing range. The proposed method utilizes per-MOSFET parameter variations seen in scaled CMOS processes. By measuring a statistical parameter of sub-threshold drain currents, we can extract a complimentary temperature value. To prove the feasibility of our method, we measure six chips fabricated with a commercial 65 nm process. The proposed method achieves a sensing accuracy of −0.54/ + 0.43 °C within a temperature range of −20 °C to 120 °C at a supply voltage of 1.2 V. In addition, the proposed method has a worst-case supply dependency of only 1.8 °C V−1 at 20 °C. |
| Databáze: | OpenAIRE |
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