Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe
| Autor: | M. Holmgren, J. Halonen, E. Rodriguez Messmer, A. Risberg, C. Angulo Barrios, Sebastian Lourdudoss |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Solid-state physics business.industry Hydride Mineralogy Heterojunction Condensed Matter Physics Epitaxy Laser Isotropic etching Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention law Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 30:987-991 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02657722 |
| Popis: | Selective regrowth of semi-insulating iron-doped Ga0.51In0.49P (SI-GaInP:Fe) and SI-GaAs:Fe around GaAs/AlGaAs mesas by hydride vapor phase epitaxy (HVPE) has been achieved. A HCl based in-situ cleaning procedure has been used to remove aluminum oxide from the etched walls of the mesas. Regrowth conducted without proper cleaning results in an irregular interface with voids. Regrowth morphology aspects are also presented. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers. |
| Databáze: | OpenAIRE |
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