A new generation of power MOSFET based on the concept of 'Floating Islands'

Autor:	P. Rossel, Frédéric Morancho, A. Peyre-Lavigne, H. Tranduc, N. Cézac
Rok vydání:	2000
Předmět:	Physics business.industry Transistor Electrical engineering Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Breakdown voltage Power semiconductor device Field-effect transistor Power MOSFET business Instrumentation Static induction transistor Voltage Diode
Zdroj:	The European Physical Journal Applied Physics. 10:203-209
ISSN:	1286-0050 1286-0042
DOI:	10.1051/epjap:2000133
Popis:	In this paper, a new concept called "Floating Islands diode" (FLI-diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This concept can be applied to any power devices (lateral or vertical). An example of vertical power MOSFET based on this concept is presented here: this new structure, called "FLIMOSFET", exhibits improved on-state resistance performance when compared to the conventional VDMOSFET. For instance, for a breakdown voltage of 900 volts, the theoretical performance are strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOSFET family are determined and compared to those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET in the 200 volts-1000 volts breakdown voltage range.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7701fb89086e57e5b917f6b97ba3e3e5 https://doi.org/10.1051/epjap:2000133 Zobrazit plný text záznamu