| Autor: |
Kyung-Mun Byun, Yong-Won Cha, Kim Min, Hyeon-deok Lee, In-Sun Park, Chang-Lyong Song, Sang-Hyeon Lee, Do-hyung Kim, Joo-Beom Lee |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005.. |
| DOI: |
10.1109/icicdt.2005.1502601 |
| Popis: |
We have attempted to reduce the plasma-induced damage to the thin gate oxides during intermetal dielectric (IMD) gap-fill process by high-density plasma (HDP) chemical vapor deposition (CVD). It was revealed that the optimization of preheating step could reduce the damage. The H/sub 2/-based HDP CVD process was also effective in reducing plasma-induced damage compared with the conventional He-based process. The gate oxide failure was reduced remarkably at the low deposition temperatures less than 400/spl deg/C. Both the significant damage reduction and the excellent gap-fill performance were achieved by the adoption of the phosphorus silicate glass (PSG) using the low temperature H/sub 2/-based HDP CVD technique. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
